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PIC18F4680-I Datasheet, PDF (430/482 Pages) Microchip Technology – PIC18F2585/2680/4585/4680 Data Sheet | |||
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PIC18F2585/2680/4585/4680
TABLE 27-1: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ⤠TA ⤠+85°C for industrial
Param
No.
Sym
Characteristic
Min Typâ Max Units
Conditions
Internal Program Memory
Programming Specifications(1)
D110 VPP Voltage on MCLR/VPP/RE3 pin 9.00
â 13.25 V (Note 3)
D113 IDDP Supply Current during
Programming
â
â
10 mA
Data EEPROM Memory
D120 ED Byte Endurance
100K 1M
â E/W -40°C to +85°C
D121 VDRW VDD for Read/Write
VMIN
â
5.5
V Using EECON to read/write
VMIN = Minimum operating
voltage
D122 TDEW Erase/Write Cycle Time
â
4
â
ms
D123 TRETD Characteristic Retention
40
â
â Year Provided no other
specifications are violated
D124 TREF Number of Total Erase/Write
Cycles before Refresh(2)
1M
10M
â E/W -40°C to +85°C
Program Flash Memory
D130 EP Cell Endurance
10K 100K â E/W -40°C to +85°C
D131 VPR VDD for Read
VMIN
â
5.5
V VMIN = Minimum operating
voltage
D132 VIE VDD for Block Erase
4.5
â
5.5
V Using ICSP⢠port
D132A VIW VDD for Externally Timed Erase 4.5
â
5.5
V Using ICSP port
or Write
D132B VPEW VDD for Self-timed Write
VMIN
â
5.5
V VMIN = Minimum operating
voltage
D133 TIE ICSP Block Erase Cycle Time
â
4
â
ms VDD > 4.5V
D133A TIW ICSP Erase or Write Cycle Time 1
(externally timed)
â
â
ms VDD > 4.5V
D133A TIW Self-timed Write Cycle Time
â
2
â
ms
D134 TRETD Characteristic Retention
40
100
â Year Provided no other
specifications are violated
â Data in âTypâ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write
instructions.
2: Refer to Section 7.8 âUsing the Data EEPROMâ for a more detailed discussion on data EEPROM
endurance.
3: Required only if Single-Supply Programming is disabled.
DS39625C-page 428
Preliminary
© 2007 Microchip Technology Inc.
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