TC4423 Datasheet, PDF (4/9 Pages) TelCom Semiconductor, Inc – 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS

TC4423
TC4424
TC4425
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
100
4700 pF
80
Fall Time vs. Supply Voltage
100
4700 pF
80
60 ^{3300 pF}
2200 pF
40
60 ^{3300 pF}
2200 pF
40
20
470 pF
0
4
6
8 10 12 14 16
VDD
Rise TIme vs. Capacitive Load
100
1500 pF
1000 pF
18
5V
80
20
470 pF
0
4
6
8 10 12 14 16
VDD
Fall TIme vs. Capacitive Load
100
1500 pF
1000 pF
18
80
5V
60
10V
60
10V
15V
15V
40
40
20
20
0
100
1000
CLOAD (pF)
10,000
Rise and Fall Times vs. Temperature
32
CLOAD = 2200 pF
30
t _FALL
28
26
24
t _RISE
22
t _RISE
20
t _FALL
18–55 _{–35 –15 5 25 45 65 85 105 125}
TA (°C)
TC4423/4/5-6 10/21/96
0
100
1000
CLOAD _(pF)
10,000
Propagation Delay vs. Input Amplitude
100
80
t _D1
CLOAD = 2200 pF
VDD = 10V
60
40
t _D2
20
0 1 2 3 4 5 6 7 8 9 10 11 12
INPUT (V)
4
© 2001 Microchip Technology Inc. DS21421A