TC4423 Datasheet, PDF (2/9 Pages) TelCom Semiconductor, Inc – 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS

TC4423
TC4424
TC4425
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B ...... V_DD + 0.3V to GND – 5.0V
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP R_θJ-A ................................................ 150°C/W
CerDIP R_θJ-C .................................................. 55°C/W
PDIP R_θJ-A ................................................... 125°C/W
PDIP R_θJ-C ..................................................... 45°C/W
SOIC R_θJ-A ................................................... 155°C/W
SOIC R_θJ-C ..................................................... 75°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
I Version ............................................ - 25°C to +85°C
E Version ........................................... - 40°C to +85°C
M Version ........................................ - 55°C to +125°C
Package Power Dissipation (T_A ≤ 70°C)
Plastic DIP ......................................................730mW
CerDIP ............................................................800mW
SOIC ............................................................... 470mW
PIN CONFIGURATIONS
NC
IN A
NC
GND
GND
NC
IN B
NC
16-Pin SO Wide
1
16
2
15
3
14
4
13
TC4423
5
TC4424
12
6
TC4425
11
7
10
8
9
4423 4424 4425
NC NC
NC
OUT A OUT A OUT A
OUT A OUT A OUT A
VDD VDD VDD
VDD VDD VDD
OUT B OUT B OUT B
OUT B OUT B OUT B
NC NC
NC
8-Pin DIP
NC ¹
IN A 2
GND 3
IN B 4
TC4423
TC4424
TC4425
4423 4424 4425
8 NC NC NC
7 OUT A OUT A OUT A
6 VDD VDD VDD
5 OUT B OUT B OUT B
NC = NO CONNECTION
NOTE: Duplicate pins must both be connected for proper operation.
ELECTRICAL CHARACTERISTICS: T_A = +25°C with 4.5V ≤ V_DD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ Max Unit
Input
V_OH
Logic 1 High Input Voltage
V_IL
Logic 0 Low Input Voltage
I_IN
Input Current
Output
V_OH
High Output Voltage
V_OL
Low Output Voltage
R_O
Output Resistance, High
R_O
Output Resistance, Low
I_PK
Peak Output Current
I_REV
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
t_R
Rise Time
t_F
Fall Time
t_D1
Delay Time
t_D2
Delay Time
Power Supply
I_S
Power Supply Current
0V ≤ V_IN ≤ V_DD
I_OUT = 10 mA, V_DD = 18V
I_OUT = 10 mA, V_DD = 18V
Duty Cycle ≤ 2%
t ≤ 300 µsec
Figure 1, C_L = 1800pF
Figure 1, C_L = 1800pF
Figure 1, C_L = 1800pF
Figure 1, C_L = 1800pF
V_IN = 3V (Both Inputs)
V_IN = 0V (Both Inputs)
2.4
—
—V
—
—
0.8 V
–1
—
1 µA
V_DD – 0.025 —
—
V
—
— 0.025 V
—
2.8
5
Ω
—
3.5
5
Ω
—
3
—A
1.5
—
—
A
—
23 35 nsec
—
25 35 nsec
—
33 75 nsec
—
38 75 nsec
—
1.5
2.5 mA
—
0.15 0.25 mA
TC4423/4/5-6 10/21/96
2
© 2001 Microchip Technology Inc. DS21421A