TC4426M Datasheet, PDF (3/18 Pages) Microchip Technology – 1.5A Dual High-Speed Power MOSFET Drivers

TC4426M/TC4427M/TC4428M
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B .......... (V_DD + 0.3V) to (GND – 5V)
Storage Temperature Range .........................-65°C to +150°C
Maximum Junction Temperature ................................. +150°C
† Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, T_A = +25ºC with 4.5V ≤ V_DD ≤ 18V.
Parameters
Sym
Min
Typ Max Units
Conditions
Input
Logic ‘1’, High Input Voltage
V_IH
2.4
Logic ‘0’, Low Input Voltage
V_IL
—
Input Current
I_IN
-1.0
Output
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
V_OH
V_OL
R_O
I_PK
I_REV
V_DD – 0.025
—
—
—
—
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
t_R
—
t_F
—
t_D1
—
t_D2
—
Power Supply Current
I_S
—
—
Note 1: Switching times ensured by design.
—
—
—
—
—
7
1.5
>0.5
19
25
20
40
—
—
—
0.8
+1.0
—
0.025
10
—
—
30
30
30
50
4.5
0.4
V
V
µA 0V ≤ V_IN ≤ V_DD
V DC TEST
V DC TEST
Ω I_OUT = 10 mA, V_DD = 18V
A V_DD = 18V
A Duty cycle ≤ 2%, t ≤ 300 µs
V_DD = 18V
ns Figure 4-1
ns Figure 4-1
ns Figure 4-1
ns Figure 4-1
mA V_IN = 3V (Both inputs)
V_IN = 0V (Both inputs)
© 2005 Microchip Technology Inc.
DS21938A-page 3