TC4424AVOE Datasheet, PDF (3/22 Pages) Microchip Technology – 3A Dual High-Speed Power MOSFET Drivers

TC4423A/TC4424A/TC4425A
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage, IN A or IN B .......... (V_DD + 0.3V) to (GND – 5V)
Package Power Dissipation (T_A=50°C)
8L PDIP .......................................................................1.2W
8L SOIC.................................................................... 0.61W
16L SOIC.....................................................................1.1W
8L DFN .................................................................... Note 3
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS (NOTE 2)
Electrical Specifications: Unless otherwise indicated, T_A = +25°C, with 4.5V ≤ V_DD ≤ 18V.
Parameters
Sym
Min
Typ Max Units
Conditions
Input
Logic ‘1’, High Input Voltage
V_IH
Logic ‘0’, Low Input Voltage
V_IL
Input Current
I_IN
Input Voltage
V_IN
Output
2.4
1.5
—
V
—
1.3
0.8
V
–1
—
1
µA 0V ≤ V_IN ≤ V_DD
-5
— V_DD+0.3 V
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection With-
stand Reverse Current
V_OH
V_OL
R_OH
R_OL
I_PK
I_REV
V_DD – 0.025
—
—
—
—
—
—
—
2.2
2.8
4.5
>1.5
—
0.025
3.0
3.5
—
—
V DC Test
V DC Test
Ω I_OUT = 10 mA, V_DD = 18V
Ω I_OUT = 10 mA, V_DD = 18V
A 10V≤ V_DD ≤18V (Note 2)
A Duty cycle ≤ 2%, t ≤ 300 µsec.
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
t_R
—
12
21
ns Figure 4-1, Figure 4-2,
C_L = 1800 pF
t_F
—
12
21
ns Figure 4-1, Figure 4-2,
C_L = 1800 pF
t_D1
—
40
48
ns Figure 4-1, Figure 4-2,
C_L = 1800 pF
t_D2
—
41
48
ns Figure 4-1, Figure 4-2,
C_L = 1800 pF
Supply Voltage
V_DD
4.5
Power Supply Current
I_S
—
I_S
—
Note 1: Switching times ensured by design.
—
18
V
1.0
2.0
mA V_IN = 3V (Both inputs)
0.15
0.25
mA V_IN = 0V (Both inputs)
2: Tested during characterization, not production tested.
3: Package power dissipation is dependent on the copper pad area on the PCB.
© 2007 Microchip Technology Inc.
DS21998B-page 3