TC1413_13 Datasheet, PDF(3/18 Page) Microchip Technology

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TC1413_13 Datasheet, PDF (3/18 Pages) Microchip Technology – 3A High-Speed MOSFET Drivers

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TC1413/TC1413N

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratingsâ

Supply Voltage ..................................................... +20V

Input Voltage ...................... VDD + 0.3V to GND â 5.0V

Power Dissipation (TA ï£ï 70Â°C)

MSOP .......................................................... 340 mW

PDIP ............................................................ 730 mW

SOIC............................................................ 470 mW

Storage Temperature Range.............. -65Â°C to +150Â°C

Maximum Junction Temperature ...................... +150ÂºC

â Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

PIN FUNCTION TABLE

Symbol

VDD

INPUT

GND

OUTPUT

VDD

Description

Supply input, 4.5V to 16V

Control input

No connection

Ground

CMOS push-pull output,

common to pin 7

CMOS push-pull output,

common to pin 6

Supply input, 4.5V to 16V

DC ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ï ï£ï VDDï ï£ï 16V.

Typical values are measured at TA = +25Â°C, VDDï = 16V.

Parameters

Sym

Min

Typ Max Units

Conditions

Input

Logic â1â, High Input Voltage

VIH

2.0

Logic â0â, Low Input Voltage

VIL

Input Current

IIN

-1.0

-10

Output

High Output Voltage

Low Output Voltage

Output Resistance

VOH VDD â 0.025 â

VOL

2.7

3.3

Peak Output Current

IPK

3.0

Latch-Up Protection

IREV

0.5

Withstand Reverse Current

Switching Time (Note 1)

Rise Time

Fall Time

Note 1: Switching times ensured by design.

0.8

1.0

ÂµA 0Vï ï£ï VINï ï£ï VDD, TA = +25Â°C

-40Â°Cï ï ï£ï TAï ï ï£ï +85Â°C

0.025

4.0

5.0

V DC Test

ï VDD = 16V, IO = 10 mA, TA = +25Â°C

0Â°Cï ï ï£ï TAï ï ï£ï +70Â°C

-40Â°Cï ï ï£ï TAï ï ï£ï +85Â°C

A VDD = 16V

A Duty cycleï ï ï£ï 2%, t ï ï ï£ï 300 Âµsec,

VDD = 16V

28 nsec TA = +25Â°C

0Â°Cï ï ï£ï TAï ï ï£ï +70Â°C

-40Â°Cï ï ï£ï TAï ï ï£ï +85Â°C, Figure 4-1

28 nsec TA = +25Â°C

0Â°Cï ï ï£ï TAï ï ï£ï +70Â°C

-40Â°Cï ï ï£ï TAï ï ï£ï +85Â°C, Figure 4-1

ï£ 2001-2012 Microchip Technology Inc.

DS21392D-page 3

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