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TC1054_12 Datasheet, PDF (3/20 Pages) Microchip Technology – 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output
TC1054/TC1055/TC1186
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Dropout Voltage
VIN – VOUT
—
—
—
TC1055; TC1186
—
TC1186
—
Supply Current
IIN
—
Shutdown Supply Current
IINSD
—
Power Supply Rejection Ratio PSRR
—
Output Short Circuit Current
IOUTSC
—
Thermal Regulation
VOUT/PD
—
Thermal Shutdown
Die Temperature
TSD
—
2
65
85
180
270
50
0.05
64
300
0.04
160
—
mV IL = 100 µA
—
IL = 20 mA
120
IL = 50 m
250
IL = 100 mA
400
IL = 150 mA (Note 4)
80
µA SHDN = VIH,
IL = 0 µA (Note 9)
0.5
µA SHDN = 0V
—
dB f 1 kHz
450
mA VOUT = 0V
—
V/W Notes 5, 6
—
°C
Thermal Shutdown Hysteresis
Output Noise
TSD
eN
—
10
—
260
—
°C
—
nV/Hz IL = IOUTMAX
SHDN Input
SHDN Input High Threshold
VIH
SHDN Input Low Threshold
VIL
45
—
—
%VIN VIN = 2.5V to 6.5V
—
—
15
%VIN VIN = 2.5V to 6.5V
ERROR Output
Minimum VIN Operating Voltage VINMIN
1.0
—
—
V
Output Logic Low Voltage
VOL
—
—
400
mV 1 mA Flows to ERROR
ERROR Threshold Voltage
VTH
—
0.95 x VR
—
V See Figure 4-2
ERROR Positive Hysteresis
VHYS
—
50
—
mV Note 7
VOUT to ERROR Delay
tDELAY
—
2.5
—
ms VOUT falling from
VR to VR – 10%
Note 1: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V,
4.0V, 5.0V.
2: TC VOUT = (VOUTMAX – VOUTMIN)x 106
VOUT x T
3: Regulation is measured at a constant junction temperature using low-duty-cycle pulse testing. Load regu-
lation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output
voltage due to heating effects are covered by the thermal regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its
nominal value.
5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipa-
tion is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX
at VIN = 6V for T = 10 ms.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation causes the device to initiate thermal shutdown. See Section 5.0
“Thermal Considerations” for more details.
7: Hysteresis voltage is referenced by VR.
8: The minimum VIN has to justify the conditions: VIN  VR + VDROPOUT and VIN  2.7V for IL = 0.1 mA to
IOUTMAX.
9: Apply for junction temperatures of -40°C to +85°C.
 2002-2012 Microchip Technology Inc.
DS21350E-page 3