MRF89XAM8A Datasheet, PDF (24/34 Pages) Microchip Technology – 868 MHz Ultra-Low Power

MRF89XAM8A
TABLE 4-1: RECOMMENDED OPERATING CONDITIONS
Parameter
Min
Typ
Max
Unit
Ambient Operating Temperature
-40
—
+85
°C
Supply Voltage for RF, Analog and Digital Circuits
2.1
—
3.6
V
Supply Voltage for Digital I/O
2.1
—
3.6
V
Input High Voltage (VIH)
0.5 * VIN
—
VIN + 0.3
V
Input Low Voltage (VIL)
-0.3V
—
0.2 * VIN
V
AC Peak Voltage on Open Collector Outputs (IO)⁽¹⁾ VIN – 1.5
—
VIN + 1.5
V
Note 1: At minimum, VIN – 1.5V should not be lower than 1.8V.
Condition
—
—
—
—
—
—
TABLE 4-2: CURRENT CONSUMPTION
Symbol
Chip Mode
Min
Typ
Max
Unit
IDDSL
Sleep
—
0.1
2
µA
IDDST
Idle
—
65
80
µA
IDDFS Frequency Synthesizer —
1.3
1.7
mA
IDDTX
Tx
—
25
30
mA
—
16
21
mA
IDDRX
Rx
—
3.0
3.5
mA
Note 1: Guaranteed by design and characterization.
Condition
Sleep clock disabled, all blocks
disabled
Oscillator and baseband enabled
Frequency synthesizer running
Output power = +10 dBm
Output power = +1 dBm⁽¹⁾
—
TABLE 4-3: DIGITAL I/O PIN INPUT SPECIFICATIONS⁽¹⁾
Symbol
Characteristic
Min
Typ
Max
Unit
Condition
VIL
VIH
IIL
IIH
VOL
VOH
Note 1:
2:
Input Low Voltage
—
—
0.2 * VIN
V
—
Input High Voltage
0.8 * VIN
—
Input Low Leakage Current⁽²⁾ -0.5
—
—
V
0.5
µA
—
VIL = 0V
Input High Leakage Current -0.5
—
0.5
µA
VIH = VIN, VIN = 3.7
Digital Low Output Voltage
—
—
0.1 * VIN
—
IOL = 1 mA
Digital Low Output
0.9 * VIN
—
—
V
IOH = -1 mA
Measurement Conditions: TA = 25°C, VIN = 3.3V, Crystal Frequency = 12.8 MHz, unless otherwise
specified.
Negative current is defined as the current sourced by the pin.
DS70651A-page 22
Preliminary
© 2010 Microchip Technology Inc.