PIC16HV540 Datasheet, PDF (21/36 Pages) Microchip Technology – Enhanced PIC16C54 EPROM-Based 8-Bit CMOS Microcontroller With On-Chip Voltage Regulator

PIC16HV540
7.1 DC Characteristics: PIC16HV540-04, 20 (Commercial)
PIC16HV540-04I, 20I (Industrial)
DC Characteristics
Power Supply Pins
Standard Operating Conditions (unless otherwise specified)
Operating Temperature 0°C ≤ TA ≤ +70°C (commercial)
–40°C ≤ TA ≤ +85°C (industrial)
Characteristic
Sym Min Typ⁽¹⁾ Max Units
Conditions
Supply Voltage
VDD
HS, XT, RC and LP options
RAM Data Retention Voltage⁽²⁾ VDR
3.5
15
1.5*
V
V Device in SLEEP mode
VDD start voltage to ensure
Power-On Reset
VPOR
VSS
V See section on Power-On Reset for details
VDD rise rate to ensure
Power-On Reset
Supply Current⁽³⁾
HS, XT and RC⁽⁴⁾ options
LP option, Commercial
Power Down Current⁽⁵⁾⁽⁶⁾
Commercial
Industrial
SVDD
IDD
IPD
0.05
VDD
0.5
11
4
0.25
5
0.3
V/ms See section on Power-On Reset for details
mA FOSC = 4.0 MHz, VDD = 15V
27 µA FOSC = 32 kHz, VDD = 15V, WDT disabled
12 µA VDD = 15V, sleep timer enabled
4.0 µA VDD = 15V, sleep timer disabled
14 µA VDD = 15V, sleep timer enabled
5.0 µA VDD = 15V, sleep timer disabled
Brown-Out Detector Threshold V
3.1
V 5V Core
Brown-Out Detector Threshold V
2.2
V 3V Core
* These parameters are characterized but not tested.
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design guidance
only and is not tested.
2: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on
the current consumption.
a) The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to
Vss, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.
b) For standby current measurements, the conditions are the same, except that
the device is in SLEEP mode.
4: Does not include current through Rext. The current through the resistor can be estimated by the
formula: IR = VDD/2Rext (mA) with Rext in kΩ.
5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.
6: The oscillator start-up time can be as much as 8 seconds for XT and LP oscillator selection, if the SLEEP
mode is exited or during initial power-up.
© 1998 Microchip Technology Inc.
Preliminary
DS40197A-page 21