TC2054 Datasheet, PDF (2/16 Pages) Microchip Technology – 50mA, 100mA, and 150mA CMOS LDOs with Shutdown and Error Output

TC2054/2055/2186
1.0 ELECTRICAL
CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .........................................................6.5V
Output Voltage................................(-0.3) to (V_IN + 0.3)
Operating Temperature .................. -40°C < T_J< 125°C
Storage Temperature.......................... -65°C to +150°C
Maximum Voltage on Any Pin ........ V_IN +0.3V to -0.3V
*Stresses above those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the
device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods my
affect device reliability.
TC2054/2055/2186 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: V_IN = V_R + 1V, I_L = 100µA, C_L = 3.3µF, SHDN > V_IH, T_A = 25°C, unless otherwise noted. BOLDFACE
type specifications apply for junction temperature of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max Units
Test Conditions
V_IN
Input Operating Voltage
2.7
—
6.0
V Note 1
IOUTMAX
Maximum Output Current
50
—
100
—
—
mA TC2054
—
TC2055
150
—
—
TC2186
V_OUT
TCV_OUT
Output Voltage
V_OUT Temperature
Coefficient
V_R - 2.0%
—
—
V_R ± 0.4%
20
40
V_R + 2.0%
—
—
V Note 2
ppm/°C Note 3
∆V_OUT/
∆V_IN
∆V_OUT/
V_OUT
Line Regulation
Load Regulation
—
0.05
-1.5
0.5
-2.5
0.5
0.5
% (V_R + 1V) < V_IN < 6V
0.5
% TC2054;TC2055 I_L = 0.1mA to IOUTMAX
0.5
TC2186
I_L = 0.1mA to IOUTMAX
Note 4
V_IN – V_OUT Dropout Voltage, Note 5
—
2
—
mV
I_L = 100µA
—
45
70
I_L = 50mA
—
90
140
TC2015; TC2185 I_L = 100mA
—
140
210
TC2185
I_L = 150mA
Note 5
I_IN
Supply Current
—
55
I_INSD
Shutdown Supply Current
—
0.05
PSRR
Power Supply Rejection Ratio
—
50
I_OUTSC
Output Short Circuit Current
160
∆V_OUT∆P_D Thermal Regulation
—
300
0.04
eN
Output Noise
—
600
80
µA SHDN = V_IH, I_L=0
0.5
µA SHDN = 0V
—
dB F_RE ≤ 120kHz
—
mA V_OUT = 0V
—
V/W Note 6
—
nV / I_L = I_OUTMAX, F = 10kHz
√Hz
t_R
Response Time
(from Shutdown Mode)
—
60
—
µsec V_IN = 4V
C_IN = 1µF, C_OUT = 10µF
I_L = 0.1mA, Note 9
Note 1: The minimum V_IN has to meet two conditions: V_IN = 2.7V and V_IN = V_R + V_DROPOUT.
2: V_R is the regulator output voltage setting. For example: V_R = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
3: TCV_OUT = _{-(--V----O-----U-----T----M------A----X------–----V----O-----U-----T----M------I--N-----)---×-----1----0---}6_--
VOUT × ∆T
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a
load range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered
by the thermal regulation specification.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, exclud-
ing load or line regulation effects. Specifications are for a current pulse equal to I_MAX at V_IN = 6V for T = 10msec.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature
and the thermal resistance from junction-to-air (i.e. T_A, T_J, θ_JA).
8: Hysteresis voltage is referenced by V_R.
9: Time required for V_OUT to reach 95% of V_R (output voltage setting), after V_SHDN is switched from 0 to V_IN.
DS21663B-page 2
© 2002 Microchip Technology Inc.