TC1070_07 Datasheet, PDF (2/20 Pages) Microchip Technology – 50mA, 100mA and 150mA Adjustable CMOS LDOs with Shutdown

TC1070/TC1071/TC1187
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (V_IN + 0.3V)
Power Dissipation................Internally Limited (Note 5)
Maximum Voltage on Any Pin ........V_IN +0.3V to -0.3V
Operating Temperature Range...... -40°C < T_J < 125°C
Storage Temperature..........................-65°C to +150°C
*Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
ELECTRICAL SPECIFICATIONS
Electrical Characteristics: V_IN = V_OUT + 1V, I_L = 0.1 mA, C_L = 3.3 μF, SHDN > V_IH, T_A = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
V_IN
I_OUTMAX
Input Operating Voltage
Maximum Output Current
2.7
—
6.0
V
Note 6
50
—
100
—
150
—
—
mA TC1070
—
TC1071
—
TC1187
V_OUT
Adjustable Output
Voltage Range
V_REF
—
5.5
V
V_REF
ΔV_REF/ΔT
ΔV_OUT/ΔV_IN
ΔV_OUT/V_OUT
Reference Voltage
V_REF Temperature Coefficient
Line Regulation
Load Regulation TC1070; TC1071
TC1187
1.165
—
—
—
—
1.20
40
0.05
0.5
0.5
1.235
—
0.35
2
3
V
ppm/°C
%
%
Note 1
(V_R + 1V) ≤ V_IN ≤ 6V
I_L = 0.1 mA to I_OUTMAX
I_L = 0.1 mA to I_OUTMAX
(Note 2)
V_IN-V_OUT
Dropout Voltage
—
—
—
TC1071; TC1187
—
TC1187
—
I_IN
Supply Current
—
I_INSD
Shutdown Supply Current
—
PSRR
Power Supply Rejection Ratio
—
I_OUTSC
Output Short Circuit Current
—
ΔV_OUT/ΔP_D Thermal Regulation
—
T_SD
Thermal Shutdown Die Temperature
—
ΔT_SD
Thermal Shutdown Hysteresis
—
eN
Output Noise
—
SHDN Input
2
65
85
180
270
50
0.05
64
300
0.04
160
10
260
—
mV I_L = 0.1 mA
—
I_L = 20 mA
120
I_L = 50 mA
250
I_L = 100 mA
400
I_L = 150 mA (Note 3)
80
μA
SHDN = V_IH, I_L = 0
0.5
μA SHDN = 0V
—
dB
F_RE ≤ 1 kHz
450
mA
V_OUT = 0V
—
V/W Note 4
—
°C
—
°C
—
nV/√Hz I_L = I_OUTMAX
V_IH
SHDN Input High Threshold
45
—
—
%V_IN V_IN = 2.5V to 6.5V
Note 1: TC V_OUT = (V_OUTMAX – V_OUTMIN) x 10⁶
V_OUT x ΔT
2: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
3: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
4: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I_LMAX at V_IN = 6V for T = 10 ms.
5: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
6: The minimum V_IN has to justify the conditions: V_IN ≥ V_R + V_DROPOUT and V_IN ≥ 2.7V for I_L = 0.1 mA to I_OUTMAX.
DS21353D-page 2
© 2007 Microchip Technology Inc.