93LCS56 Datasheet, PDF (2/12 Pages) Microchip Technology – 2K/4K 2.5V Microwire Serial EEPROM with Software Write Protect

93LCS56/66
1.0 ELECTRICAL CHARACTERISTICS
1.1 Maximum Ratings*
VCC...................................................................................7.0V
All inputs and outputs w.r.t. VSS ............... -0.6V to VCC +1.0V
Storage temperature ..................................... -65˚C to +150˚C
Ambient temp. with power applied ................ -65˚C to +125˚C
Soldering temperature of leads (10 seconds) ............. +300˚C
ESD protection on all pins................................................4 kV
*Notice: Stresses above those listed under “Maximum ratings”
may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at those or any
other conditions above those indicated in the operational listings
of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
TABLE 1-1:
Name
CS
CLK
DI
DO
VSS
PE
PRE
VCC
PIN FUNCTION TABLE
Function
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
Program Enable
Protect Register Enable
Power Supply
TABLE 1-2: DC AND AC ELECTRICAL CHARACTERISTICS
VCC = +2.5V to +6.0V
Commercial(C): Tamb = 0˚C to +70˚C
Industrial (I): Tamb = -40˚C to +85˚C
Parameter
Symbol
Min
Max
Units
High level input voltage
VIH
2.0
VCC +1
V
Low level input voltage
VIL
-0.3
0.8
V
Low level output voltage VOL1
—
0.4
V
VOL2
—
0.2
V
High level output voltage VOH1
2.4
—
V
VOH2
VCC-0.2
—
V
Input leakage current
ILI
-10
10
µA
Output leakage current
ILO
-10
10
µA
Pin capacitance
CIN, COUT
—
7
pF
(all inputs/outputs)
Operating current
ICC Write
—
3
mA
ICC Read
—
1
mA
500
µA
Standby current
ICCS
—
100
µA
30
µA
Clock frequency
FCLK
—
2
MHz
1
MHz
Clock high time
TCKH
250
—
ns
Clock low time
TCKL
250
—
ns
Chip select setup time
TCSS
50
—
ns
Chip select hold time
TCSH
0
—
ns
Chip select low time
TCSL
250
—
ns
PRE setup time
TPRES
100
—
ns
PE setup time
TPES
100
—
ns
PRE hold time
TPREH
0
—
ns
PE hold time
TPEH
500
—
ns
Data input setup time
TDIS
100
—
ns
Data input hold time
TDIH
100
—
ns
Data output delay time
TPD
—
400
ns
Data output disable time TCZ
—
100
ns
Note 1: This parameter is tested at Tamb = 25˚C and FCLK = 1 MHz.
2: This parameter is periodically sampled and not 100% tested.
Conditions
VCC ≥ 2.5V
VCC ≥ 2.5V
IOL = 2.1 mA; VCC = 4.5V
IOL = 100 µA; VCC = 2.5V
IOH = -400µA; VCC = 4.5V
IOH = -100µA; VCC = 2.5V
VIN = 0.1V to VCC
VOUT = 0.1V to Vcc
VIN/VOUT = 0V (Note 1 & 2)
Tamb = +25˚C; FCLK = 1 MHz
FCLK = 2 MHz; VCC = 3.0V (Note 2)
FCLK = 2 MHz; VCC = 6.0V
FCLK = 1 MHz; VCC = 3.0V
CLK = CS = 0V; VCC = 6.0V
CLK = CS = 0V; VCC = 3.0V
VCC ≥ 4.5V
VCC < 4.5V
Relative to CLK
Relative to CLK
Relative to CLK
Relative to CLK
Relative to CLK
Relative to CLK
Relative to CLK
Relative to CLK
CL=100 pF
CL=100 pF (Note 2)
DS11181D-page 2
Preliminary
© 1996 Microchip Technology Inc.
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