MCP2003_13 Datasheet, PDF (14/34 Pages) Microchip Technology – LIN J2602 Transceiver

MCP2003/4/3A/4A
2.3 DC Specifications (Continued)
DC Specifications
Electrical Characteristics:
Unless otherwise indicated, all limits are specified for:
VBB = 6.0V to 30.0V
TA = -40°C to +125°C
Parameter
Sym
Min.
Typ.
Max.
Units
Conditions
Bus Interface
High Level Input Voltage
VIH(LBUS)
0.6 VBB
—
—
V Recessive state
Low Level Input Voltage
VIL(LBUS)
-8
—
0.4 VBB
V Dominant state
Input Hysteresis
VHYS
—
— 0.175 VBB
V VIH(LBUS) – VIL(LBUS)
Low Level Output Current
IOL(LBUS)
40
—
200
mA Output voltage = 0.1 VBB,
VBB = 12V
High Level Output Current
IOH(LBUS)
—
—
20
µA
Pull-up Current on Input
IPU(LBUS)
5
—
180
µA ~30 kΩ internal pull-up
@ VIH (LBUS) = 0.7 VBB
Short Circuit Current Limit
ISC
50
—
200
mA (Note 1)
High Level Output Voltage
VOH(LBUS)
0.9 VBB
—
VBB
V
Driver Dominant Voltage
V_LOSUP
—
—
1.2
V VBB = 7V, RLOAD = 500Ω
Driver Dominant Voltage
V_HISUP
—
—
2.0
V VBB = 18V, RLOAD = 500Ω
Driver Dominant Voltage
V_LOSUP-1K
0.6
—
—
V VBB = 7V, RLOAD = 1 kΩ
Driver Dominant Voltage
V_HISUP-1K
0.8
—
—
V VBB = 18V, RLOAD = 1 kΩ
Input Leakage Current
IBUS_PAS_DOM
-1
-0.4
—
(at the receiver during
dominant bus level)
mA Driver off,
VBUS = 0V,
VBB = 12V
Input Leakage Current
IBUS_PAS_REC
—
12
20
µA Driver off,
(at the receiver during
8V < VBB < 18V
recessive bus level)
8V < VBUs < 18V
VBUS ≥ VBB
Leakage Current
IBUS_NO_GND
-10
1.0
+10
µA GNDDEVICE = VBB,
(disconnected from ground)
0V < VBUS < 18V,
VBB = 12V
Leakage Current
IBUS_NO_VBB
—
—
10
µA VBB = GND,
(disconnected from VBB)
0 < VBUS < 18V,
(Note 2)
Receiver Center Voltage
VBUS_CNT
0.475 VBB 0.5 0.525 VBB
VBB
V VBUS_CNT = (VIL (LBUS) +
VIH (LBUS))/2
Slave Termination
RSLAVE
20
30
47
kΩ
Capacitance of Slave Node
CSLAVE
50
pF
Note 1: Internal current limited. 2.0 ms maximum recovery time (RLBUS = 0Ω, TX = 0.4 VREG, VLBUS = VBB).
2: Node has to sustain the current that can flow under this condition; bus must be operational under this
condition.
DS22230D-page 14
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