PIC16F631 Datasheet, PDF (124/294 Pages) Microchip Technology – 20-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology

PIC16F631/677/685/687/689/690
10.1.2 READING THE DATA EEPROM
MEMORY
To read a data memory location, the user must write the
address to the EEADR register, clear the EEPGD
control bit of the EECON1 register, and then set control
bit RD. The data is available at the very next cycle, in
the EEDAT register; therefore, it can be read in the next
instruction. EEDAT will hold this value until another
read or until it is written to by the user (during a write
operation).
EXAMPLE 10-1: DATA EEPROM READ
BANKSEL EEADR
;
MOVF DATA_EE_ADDR, W;
MOVWF EEADR
;Data Memory
;Address to read
BANKSEL EECON1
;
BCF
EECON1, EEPGD ;Point to DATA memory
BSF
EECON1, RD
;EE Read
BANKSEL EEDAT
;
MOVF EEDAT, W
;W = EEDAT
BCF
STATUS, RP1 ;Bank 0
10.1.3 WRITING TO THE DATA EEPROM
MEMORY
To write an EEPROM data location, the user must first
write the address to the EEADR register and the data
to the EEDAT register. Then the user must follow a
specific sequence to initiate the write for each byte.
The write will not initiate if the above sequence is not
followed exactly (write 55h to EECON2, write AAh to
EECON2, then set WR bit) for each byte. Interrupts
should be disabled during this code segment.
Additionally, the WREN bit in EECON1 must be set to
enable write. This mechanism prevents accidental
writes to data EEPROM due to errant (unexpected)
code execution (i.e., lost programs). The user should
keep the WREN bit clear at all times, except when
updating EEPROM. The WREN bit is not cleared
by hardware.
After a write sequence has been initiated, clearing the
WREN bit will not affect this write cycle. The WR bit will
be inhibited from being set unless the WREN bit is set.
At the completion of the write cycle, the WR bit is
cleared in hardware and the EE Write Complete
Interrupt Flag bit (EEIF) is set. The user can either
enable this interrupt or poll this bit. EEIF must be
cleared by software.
EXAMPLE 10-2: DATA EEPROM WRITE
BANKSEL EEADR
;
MOVF
DATA_EE_ADDR, W;
MOVWF EEADR
;Data Memory Address to write
MOVF
DATA_EE_DATA, W;
MOVWF EEDAT
;Data Memory Value to write
BANKSEL EECON1
;
BCF
EECON1, EEPGD ;Point to DATA memory
BSF
EECON1, WREN ;Enable writes
BCF
BTFSC
GOTO
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
INTCON, GIE
INTCON, GIE
$-2
55h
EECON2
AAh
EECON2
EECON1, WR
INTCON, GIE
;Disable INTs.
;SEE AN576
;
;Write 55h
;
;Write AAh
;Set WR bit to begin write
;Enable INTs.
SLEEP
BCF
EECON1, WREN
BANKSEL 0x00
;Wait for interrupt to signal write complete (optional)
;Disable writes
;Bank 0
DS41262D-page 122
© 2007 Microchip Technology Inc.