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SST39LF200A_11 Datasheet, PDF (1/37 Pages) Microchip Technology – Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash | |||
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2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
A Microchip Technology Company
SST39VF200A / SST39VF400A / SST39VF800A
Data Sheet
The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K
x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with
SST proprietary, high-performance CMOS SuperFlash technology. The split-gate
cell design and thick oxide tunneling injector attain better reliability and manufac-
turability compared with alternate approaches. The SST39LF200A/400A/800A
write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/
800A write (Program or Erase) with a 2.7-3.6V power supply. These devices con-
form to JEDEC standard pinouts for x16 memories.
Features:
⢠Organized as 128K x16 / 256K x16 / 512K x16
⢠Single Voltage Read and Write Operations
â 3.0-3.6V for SST39LF200A/400A/800A
â 2.7-3.6V for SST39VF200A/400A/800A
⢠Superior Reliability
â Endurance: 100,000 Cycles (typical)
â Greater than 100 years Data Retention
⢠Low Power Consumption
(typical values at 14 MHz)
â Active Current: 9 mA (typical)
â Standby Current: 3 µA (typical)
⢠Sector-Erase Capability
â Uniform 2 KWord sectors
⢠Block-Erase Capability
â Uniform 32 KWord blocks
⢠Fast Read Access Time
â 55 ns for SST39LF200A/400A/800A
â 70 ns for SST39VF200A/400A/800A
⢠Latched Address and Data
⢠Fast Erase and Word-Program
â Sector-Erase Time: 18 ms (typical)
â Block-Erase Time: 18 ms (typical)
â Chip-Erase Time: 70 ms (typical)
â Word-Program Time: 14 µs (typical)
â Chip Rewrite Time:
2 seconds (typical) for SST39LF/VF200A
4 seconds (typical) for SST39LF/VF400A
8 seconds (typical) for SST39LF/VF800A
⢠Automatic Write Timing
â Internal VPP Generation
⢠End-of-Write Detection
â Toggle Bit
â Data# Polling
⢠CMOS I/O Compatibility
⢠JEDEC Standard
â Flash EEPROM Pinouts and command sets
⢠Packages Available
â 48-lead TSOP (12mm x 20mm)
â 48-ball TFBGA (6mm x 8mm)
â 48-ball WFBGA (4mm x 6mm)
â 48-bump XFLGA (4mm x 6mm) â 4 and 8Mbit
⢠All non-Pb (lead-free) devices are RoHS compliant
©2011 Silicon Storage Technology, Inc.
www.microchip.com
DS25001A
03/11
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