SST38VF6401B Datasheet, PDF (1/58 Pages) Microchip Technology – 64 Mbit (x16) Advanced Multi-Purpose Flash Plus

SST38VF6401B / SST38VF6402B
SST38VF6403B / SST38VF6404B
64 Mbit (x16) Advanced Multi-Purpose Flash Plus
Features
• Organized as 4M x16
• Single Voltage Read and Write Operations
- 2.7-3.6V
• Superior Reliability
- Endurance: 100,000 Cycles minimum
- Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
- Active Current: 25 mA (typical)
- Standby Current: 5 µA (typical)
- Auto Low Power Mode: 5 µA (typical)
• 128-bit Unique ID
• Security-ID Feature
- 248 Word, user One-Time-Programmable
• Protection and Security Features
- Hardware Boot Block Protection/WP# Input Pin,
Uniform (32 KWord), and Non-Uniform
(8 KWord) options available
- User-controlled individual block (32 KWord) pro-
tection, using software only methods
- Password protection
• Hardware Reset Pin (RST#)
• Fast Read and Page Read Access Times:
- 70 ns Read access time
- 25 ns Page Read access times
- 8-Word Page Read buffer
• Latched Address and Data
• Fast Erase Times:
- Block-Erase Time: 18 ms (typical)
- Chip-Erase Time: 40 ms (typical)
• Erase-Suspend/-Resume Capabilities
• Fast Word and Write-Buffer Programming Times:
- Word-Program Time: 7 µs (typical)
- Write Buffer Programming Time: 1.75 µs / Word
(typical)
- 16-Word Write Buffer
• Automatic Write Timing
- Internal V_PP Generation
• End-of-Write Detection
- Toggle Bits
- Data# Polling
- RY/BY# Output
• CMOS I/O Compatibility
• JEDEC Standard
- Flash EEPROM Pinouts and command sets
• CFI Compliant
• Packages Available
- 48-lead TSOP
- 48-ball TFBGA
• All non-Pb (lead-free) devices are RoHS compliant
Description
The SST38VF6401B, SST38VF6402B, SST38VF6403B,
and SST38VF6404B devices are 4M x16 CMOS
Advanced Multi-Purpose Flash Plus (Advanced MPF+)
manufactured with Microchip proprietary, high-perfor-
mance CMOS SuperFlash technology. The split-gate cell
design and thick-oxide tunneling injector attain better reli-
ability and manufacturability compared with alternate
approaches. The SST38VF6401B/6402B/6403B/6404B
write (Program or Erase) with a 2.7-3.6V power supply.
These devices conform to JEDEC standard pin assign-
ments for x16 memories.
Featuring high performance Word-Program, the
SST38VF6401B/6402B/6403B/6404B provide a typical
Word-Program time of 7 µsec. For faster word-pro-
gramming performance, the Write-Buffer Programming
feature, has a typical word-program time of 1.75 µsec.
These devices use Toggle Bit, Data# Polling, or the RY/
BY# pin to indicate Program operation completion. In
addition to single-word Read, Advanced MPF+ devices
provide a Page-Read feature that enables a faster
word read time of 25 ns, eight words on the same page.
To protect against inadvertent write, the
SST38VF6401B/6402B/6403B/6404B have on-chip
hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spec-
trum of applications, these devices are available with
100,000 cycles minimum endurance. Data retention is
rated at greater than 100 years.
The SST38VF6401B/6402B/6403B/6404B are suited for
applications that require the convenient and economi-
cal updating of program, configuration, or data mem-
ory. For all system applications, Advanced MPF+
significantly improve performance and reliability, while
lowering power consumption. These devices inherently
use less energy during Erase and Program than alter-
native flash technologies. The total energy consumed
is a function of the applied voltage, current, and time of
application. For any given voltage range, the Super-
Flash technology uses less current to program and has
 2013 Microchip Technology Inc.
Preliminary
DS25002B-page 1