SST26VF032B Datasheet, PDF (1/77 Pages) Microchip Technology – 2.5V/3.0V 32 Mbit Serial Quad I/O (SQI) Flash Memory

SST26VF032B / SST26VF032BA
2.5V/3.0V 32 Mbit Serial Quad I/O (SQI) Flash Memory
Features
• Single Voltage Read and Write Operations
- 2.7-3.6V or 2.3-3.6V
• Serial Interface Architecture
- Nibble-wide multiplexed I/O’s with SPI-like serial
command structure
- Mode 0 and Mode 3
- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
• High Speed Clock Frequency
- 2.7-3.6V: 104 MHz max
- 2.3-3.6V: 80 MHz max
• Burst Modes
- Continuous linear burst
- 8/16/32/64 Byte linear burst with wrap-around
• Superior Reliability
- Endurance: 100,000 Cycles (min)
- Greater than 100 years Data Retention
• Low Power Consumption:
- Active Read current: 15 mA (typical @ 104 MHz)
- Standby Current: 15 µA (typical)
• Fast Erase Time
- Sector/Block Erase: 18 ms (typ), 25 ms (max)
- Chip Erase: 35 ms (typ), 50 ms (max)
• Page-Program
- 256 Bytes per page in x1 or x4 mode
• End-of-Write Detection
- Software polling the BUSY bit in status register
• Flexible Erase Capability
- Uniform 4 KByte sectors
- Four 8 KByte top and bottom parameter overlay
blocks
- One 32 KByte top and bottom overlay block
- Uniform 64 KByte overlay blocks
• Write-Suspend
- Suspend Program or Erase operation to access
another block/sector
• Software Reset (RST) mode
• Software Write Protection
- Individual-Block Write Protection with permanent
lock-down capability
- 64 KByte blocks, two 32 KByte blocks, and
eight 8 KByte parameter blocks
- Read Protection on top and bottom 8 KByte
parameter blocks
• Security ID
- One-Time Programmable (OTP) 2 KByte, Secure ID
- 64 bit unique, factory pre-programmed identifier
- User-programmable area
• Temperature Range
- Industrial: -40°C to +85°C
- Extended: -40°C to +105°C
• Packages Available
- 8-contact WDFN (6mm x 5mm)
- 8-lead SOIJ (5.28 mm)
- 24-ball TBGA (6mm x 8mm)
• All devices are RoHS compliant
Product Description
The Serial Quad I/O™ (SQI™) family of flash-memory
devices features a six-wire, 4-bit I/O interface that allows for
low-power, high-performance operation in a low pin-count
package. SST26VF032B/032BA also support full com-
mand-set compatibility to traditional Serial Peripheral Inter-
face (SPI) protocol. System designs using SQI flash devices
occupy less board space and ultimately lower system costs.
All members of the 26 Series, SQI family are manufactured
with proprietary, high-performance CMOS SuperFlash®
technology. The split-gate cell design and thick-oxide tun-
neling injector attain better reliability and manufacturability
compared with alternate approaches.
SST26VF032B/032BA significantly improve performance
and reliability, while lowering power consumption. These
devices write (Program or Erase) with a single power supply
of 2.3-3.6V. The total energy consumed is a function of the
applied voltage, current, and time of application. Since for
any given voltage range, the SuperFlash technology uses
less current to program and has a shorter erase time, the
total energy consumed during any Erase or Program opera-
tion is less than alternative flash memory technologies.
SST26VF032B/032BA are offered in 8-contact WDFN
(6 mm x 5 mm), 8-lead SOIJ (5.28 mm), and 24-ball
TBGA(6mm x 8mm). See Figure 2-2 for pin assignments.
Two configurations are available upon order.
SST26VF032B default at power-up has the WP# and
HOLD# pins enabled, and the SIO2 and SIO3 pins dis-
abled, to initiate SPI-protocol operations.
SST26VF032BA default at power-up has the WP# and
HOLD# pins disabled, and the SIO2 and SIO3 pins
enabled, to initiate Quad I/O operations. See “I/O Con-
figuration (IOC)” on page 12 for more information about
configuring WP#/HOLD# and SIO2/SIO3 pins.
 2013-2016 Microchip Technology Inc.
DS20005218E-page 1