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SST25VF080B_15 Datasheet, PDF (1/32 Pages) Microchip Technology – 8 Mbit SPI Serial Flash | |||
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SST25VF080B
8 Mbit SPI Serial Flash
Features
⢠Single Voltage Read and Write Operations
- 2.7-3.6V
⢠Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
⢠High Speed Clock Frequency
- 50/66 MHz conditional (see Table 5-6)
⢠Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
⢠Low Power Consumption:
- Active Read Current: 10 mA (typical)
- Standby Current: 5 µA (typical)
⢠Flexible Erase Capability
- Uniform 4 KByte sectors
- Uniform 32 KByte overlay blocks
- Uniform 64 KByte overlay blocks
⢠Fast Erase and Byte-Program:
- Chip-Erase Time: 35 ms (typical)
- Sector-/Block-Erase Time: 18 ms (typical)
- Byte-Program Time: 7 µs (typical)
⢠Auto Address Increment (AAI) Programming
- Decrease total chip programming time over
Byte-Program operations
⢠End-of-Write Detection
- Software polling the BUSY bit in Status Register
- Busy Status readout on SO pin in AAI Mode
⢠Hold Pin (HOLD#)
- Suspends a serial sequence to the memory
without deselecting the device
⢠Write Protection (WP#)
- Enables/Disables the Lock-Down function of the
status register
⢠Software Write Protection
- Write protection through Block-Protection bits in
status register
⢠Temperature Range
- Commercial: 0°C to +70°C
- Industrial: -40°C to +85°C
⢠Packages Available
- 8-lead SOIC (200 mils)
- 8-contact WSON (6mm x 5mm)
- 8-lead PDIP (300 mils)
⢠All devices are RoHS compliant
Product Description
25 series Serial Flash family features a four-wire, SPI-
compatible interface that allows for a low pin-count
package which occupies less board space and ulti-
mately lowers total system costs. The SST25VF080B
devices are enhanced with improved operating fre-
quency and lower power consumption. SST25VF080B
SPI serial flash memories are manufactured with pro-
prietary, high-performance CMOS SuperFlash technol-
ogy. The split-gate cell design and thick-oxide tunneling
injector attain better reliability and manufacturability
compared with alternate approaches.
The SST25VF080B devices significantly improve per-
formance and reliability, while lowering power con-
sumption. The devices write (Program or Erase) with a
single power supply of 2.7-3.6V for SST25VF080B.
The total energy consumed is a function of the applied
voltage, current, and time of application. Since for any
given voltage range, the SuperFlash technology uses
less current to program and has a shorter erase time,
the total energy consumed during any Erase or Pro-
gram operation is less than alternative flash memory
technologies.
The SST25VF080B device is offered in 8-lead SOIC
(200 mils), 8-contact WSON (6mm x 5mm), and 8-lead
PDIP (300 mils) packages. See Figure 2-1 for pin
assignments.
ï£ 2015 Microchip Technology Inc.
DS20005045C-page 1
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