BU508D Datasheet, PDF (2/8 Pages) Wing Shing Computer Components – SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

BU208D/508D/508DFI
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
TO-3 TO-218 ISOWATT218
Max 1
1
2.5
o_{C/ W}
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
T est Con ditio ns
ICES Collector Cut -off
Current (VBE = 0)
VCE = 1500 V
VCE = 1500 V
Tj = 125 ^oC
IEBO
VCE(sat)∗
Emitter Cut- off Current
(I_C = 0)
Col lec t or-E mit t er
Saturation Voltage
VEB = 5 V
IC = 4.5 A
IB = 2 A
V_{CEO(s us)} Collector-Emitt er
Sustaining Voltage
I_C = 100 m A
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 4.5 A
IB = 2 A
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 4.5 A hF E = 2.5 VCC = 140 V
LC = 0.9 mH LB = 3 µH
V_F
Diode F orward Volt age I_F = 4 A
f_T
Transition Frequency I_C = 0.1 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
V_CE = 5 V f = 5 MHz
Min.
700
T yp.
7
550
7
Max.
1
2
300
1
1 .3
2
Unit
mA
mA
mA
V
V
V
µs
ns
V
MHz
Safe Operating Area (TO-3)
Safe Operating Area (TO-218/ISOWATT218)
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