BU508D Datasheet, PDF (1/8 Pages) Wing Shing Computer Components – SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

BU208D/508D/508DFI
HIGH VOLTAGE FASTSWITCHING NPN
POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPES
s HIGH VOLTAGE CAPABILITY
s U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)
s JEDEC TO-3 METAL CASE
s NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
APPLICATIONS:
s HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BU208D, BU508D and BU508DFI are
manufactured using Multiepitaxial Mesa
technology for cost-effective high performance
and uses a Hollow Emitter structure to enhance
switching speeds.
1
2
TO-3
TO-218
3
3
2
2
1
ISOWATT218 ¹
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
VCES
V _CEO
V_EBO
IC
ICM
Parameter
Collector-Emit ter Voltage (VBE = 0)
Collector-Emitter Voltage (I_B = 0)
Emitter-Base Voltage (I_C = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
P_tot T otal Dissipat ion at T_c = 25 ^oC
T_stg Storage Temperature
Tj
Max. O perating Junction Temperature
June 1996
Valu e
1500
7 00
10
8
15
TO - 3 TO - 218 ISOWATT218
150
125
50
-65 to 150 -65 to 150 -65 to 150
150
150
150
Unit
V
V
V
A
A
W
o_C
o_C
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