MIC5022 Datasheet, PDF (4/9 Pages) Micrel Semiconductor – Half-Bridge MOSFET Driver

MIC5022
Micrel
Electrical Characteristics
T_A = 25°C, Gnd = 0V, V_DD = 12V, Gate C_L = 1500pF (IRF540 MOSFET) unless otherwise specificed
Symbol Parameter
Condition
Min Typ Max Units
D.C. Supply Current
Input Threshold
V_DD = 12V, Input = 0V
V_DD = 36V, Input = 0V
V_DD = 12V, Input = 5V
V_DD = 36V, Input = 5V
2.5
5
mA
6.0
10
mA
2.4
5
mA
3.0
25
mA
0.8
1.4
2.0
V
Input Hysteresis
0.1
V
Input Pull-Down Current
Input = 5V
10
20
40
µA
Enable Threshold
0.8
1.4
2.0
V
Enable Hysteresis
0.1
V
Fault Output
Saturation Voltage
Fault Current = 1.6mA
Note 1
0.15 0.4
V
Fault Output Leakage
Current Limit Thresh., Low-Side
Fault = 36V
Note 2
–1 0.01 +1
µA
30
50
70
mV
Current Limit Thresh., High-Side Note 2
30
50
70
mV
t_G(ON)
t_G(OFF)
t_DLH
t_R
t_DHL
t_F
t_DLH
t_R
t_DHL
t_F
Gate On Voltage, High-Side
Gate On Voltage, Low-Side
Gate On Time, Fixed
Gate Off Time, Adjustable
Gate Turn-On Delay, High-Side
Gate Rise Time, High-Side
Gate Turn-Off Delay, High-Side
Gate Fall Time, High-Side
Gate Turn-On Delay, Low-Side
Gate Rise Time, Low-Side
Gate Turn-Off Delay, Low-Side
Gate Fall Time, Low-Side
V_DD = 12V, Note 3
V_DD = 36V, Note 3
V_DD = 12V, Note 3
V_DD = 36V, Note 3
Sense Differential > 70mV
Sense Differential > 70mV, C_T = 0pF
Note 4
Note 5
Note 6
Note 7
Note 4
Note 8
Note 9
Note 10
16
18
21
V
46
49
52
V
10
11
V
14
15
18
V
2
5
10
µs
10
20
50
µs
1.4
2.0
µs
0.8
1.5
µs
1.2
2.0
µs
0.6
1.5
µs
1.7
2.5
µs
0.7
1.5
µs
0.5
1.0
µs
1.0
1.5
µs
Note 1
Note 2
Note 3
Voltage remains low for time affected by C_T.
When using sense MOSFETs, it is recommended that R_SENSE < 50Ω. Higher values may affect the sense MOSFET’s current transfer ratio.
DC measurement.
Note 4 Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 0V to 2V.
Note 5 Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 17V.
Note 6 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 20V (Gate on voltage) to 17V.
Note 7 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 17V to 2V.
Note 8 Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 10V.
Note 9 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 15V (Gate on voltage) to 10V.
Note 10 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 10V to 2V.
September 1999
181
MIC5022