PL602-04 Datasheet, PDF (3/4 Pages) Micrel Semiconductor – Low Phase Noise CMOS XO (96MHz to 200MHz)

3. AC Specifications
PARAMETERS
Input Crystal Frequency
Output Clock Rise/Fall Time
(Standard Drive)
Output Clock Rise/Fall Time
(High Drive)
Output Clock Duty Cycle
PL602-04
Low Phase Noise CMOS XO (96MHz to 200MHz)
SYMBOL
CONDITIONS
0.3V ~ 3.0V with 15 pF load
0.3V ~ 3.0V with 15 pF load
Measured @ 50% VDD
MIN.
12
45
TYP.
2.4
1.2
50
MAX.
25
55
UNITS
MHz
ns
%
4. Jitter and Phase Noise Specification
PARAMETERS
RMS Period Jitter
(1 sigma – 1000 samples)
Phase Noise relative to carrier
Phase Noise relative to carrier
Phase Noise relative to carrier
Phase Noise relative to carrier
Phase Noise relative to carrier
Phase Noise relative to carrier
CONDITIONS
at 80MHz, with capacitive decoupling
between VDD and GND.
155.52MHz @100Hz offset
155.52MHz @1kHz offset
155.52MHz @10kHz offset
155.52MHz @100kHz offset
155.52MHz @1MHz offset
155.52MHz @10MHz offset
MIN. TYP. MAX. UNITS
20
ps
-100
dBc/Hz
-115
dBc/Hz
-125
dBc/Hz
-116
dBc/Hz
-114
dBc/Hz
-132
dBc/Hz
5. Crystal Specifications
PARAMETERS
Crystal Resonator Frequency
Crystal Loading Capacitance Rating
Driving power
ESR
SYMBOL
F_XIN
CL _(xtal)
RS
MIN.
TYP.
MAX.
12
25
20
1
30
UNITS
MHz
pF
mW

PACKAGE INFORMATION
8 PIN ( dimensions in mm )
Symbol
A
Narrow SOIC
Min.
Max
.
1.34
1.74
TSSOP
Min.
Max
.
-
1.20
EH
A1
0.10
0.25
0.05
0.15
B
0.33
0.51
0.19
0.30
C
0.19
0.25
0.09
0.20
D
D
4.80
4.95
2.90
3.10
E
3.80
4.00
4.30
4.50
H
5.80
6.20
6.20
6.60
L
0.38
1.27
0.45
0.75
e
1.27 BSC
0.65 BSC
A1
A
C
L
B
e
Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel [phone] • fax [phone] • www.micrel.com Rev 11/16/11 Page 3