MIC5021 Datasheet, PDF (3/9 Pages) Micrel Semiconductor – High-Speed High-Side MOSFET Driver

MIC5021
Absolute Maximum Ratings
Supply Voltage (V_DD) .................................................. +40V
Input Voltage ................................................ –0.5V to +15V
Sense Differential Voltage .......................................... ±6.5V
Sense + or Sense – to Gnd .......................... –0.5V to +36V
Timer Voltage (C_T) ..................................................... +5.5V
V_BOOST Capacitor .................................................... 0.01µF
Micrel
Operating Ratings
Supply Voltage (V_DD) .................................... +12V to +36V
Temperature Range
PDIP ....................................................... –40°C to +85°C
SOIC ...................................................... –40°C to +85°C
Electrical Characteristics
T_A = 25°C, Gnd = 0V, V_DD = 12V, C_T = Open, Gate C_L = 1500pF (IRF540 MOSFET) unless otherwise specified
Symbol Parameter
Condition
Min Typ
Max Units
D.C. Supply Current
Input Threshold
V_DD = 12V, Input = 0V
V_DD = 36V, Input = 0V
V_DD = 12V, Input = 5V
V_DD = 36V, Input = 5V
1.8
4
mA
2.5
6
mA
1.7
4
mA
2.5
6
mA
0.8
1.4
2.0
V
Input Hysteresis
0.1
V
Input Pull-Down Current
Input = 5V
10
20
40
µA
Current Limit Threshold
Note 1
30
50
70
mV
t_G(ON)
t_G(OFF)
t_DLH
t_R
t_DLH
t_F
f_max
Gate On Voltage
Gate On Time, Fixed
Gate Off Time, Adjustable
Gate Turn-On Delay
Gate Rise Time
Gate Turn-Off Delay
Gate Fall Time
Maximum Operating Frequency
V_DD = 12V Note 2
V_DD = 36V Note 2
Sense Differential > 70mV
Sense Differential > 70mV, C_T = 0pF
Note 3
Note 4
Note 5
Note 6
Note 7
16
18
21
V
5
46
50
52
V
2
6
10
µs
10
20
50
µs
500 1000 ns
400 500
ns
800 1500 ns
400 500
ns
100 150
kHz
Note 1
Note 2
Note 3
Note 4
Note 5
Note 6
Note 7
When using sense MOSFETs, it is recommended that R_SENSE < 50Ω. Higher values may affect the sense MOSFET’s current transfer ratio.
DC measurement.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 0V to 2V.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 20V (Gate on voltage) to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 17V to 2V.
Frequency where gate on voltage reduces to 17V with 50% input duty cycle.
October 1998
5-171