MIC4103_10 Datasheet, PDF (12/18 Pages) Micrel Semiconductor – 100V Half Bridge MOSFET Drivers 3/2A Sinking/Sourcing Current

Micrel
The value of V_F should be taken at the peak current
through the diode, however, this current is difficult to
calculate because of differences in source impedances.
The peak current can either be measured or the value of
V_F at the average current can be used and will yield a good
approximation of diode power dissipation.
The reverse leakage current of the internal bootstrap diode
is typically 11µA at a reverse voltage of 100V and 125°C.
Power dissipation due to reverse leakage is typically much
less than 1mW and can be ignored.
Reverse recovery time is the time required for the injected
minority carriers to be swept away from the depletion
region during turn-off of the diode. Power dissipation due
to reverse recovery can be calculated by computing the
average reverse current due to reverse recovery charge
times the reverse voltage across the diode.
MIC4103/4104
November 2010
12
M9999-110910-B