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MIC3001 Datasheet, PDF (11/74 Pages) Micrel Semiconductor – SFP Management IC with Internal Calibration
MIC3001
Electrical Characteristics
Symbol
Parameter
Condition
Min Typ
Control and Status I/O Timing, TXFAULT, TXDISABLE, RSIN, RSOUT, and RXLOS
tOFF
TXDISABLE Assert Time
From input asserted to optical output at 10%
of nominal, CCOMP = 10nF.
tON
TXDISABLE De-assert Time
From input de-asserted to optical output at
90% of nominal, CCOMP = 10nF.
tINIT
Initialization Time
From power on or transmitter enabled to
optical output at 90% of nominal and
TX_FAULT de-asserted.(4)
tINIT2
tFAULT
tRESET
Power-on Initialization Time
TXFAULT Assert Time
Fault Reset Time
From power on to APC loop enabled.
From fault condition to TXFAULT assertion.(4)
Length of time TXDISABLE must be asserted 10
to reset fault condition.
tLOSS_ON
tLOSS_OFF
tDATA
RXLOS Assert Time
RXLOS De-assert Time
Analog Parameter Data Ready
From loss of signal to RXLOS asserted.
From signal acquisition to LOS de-asserted.
From power on to valid analog parameter
data available.(4)
tPROP_IN
TXFAULT, TXDISABLE, RXLOS,
RSIN Input Propagation Time
Time from input change to corresponding
internal register bit set or cleared.(4)
tPROP_OUT
TXFAULT, RSOUT, /INT Output
Propagation Time
From an internal register bit set or cleared to
corresponding output change.(4)
Fault Comparators
φFLTTMR
Fault Suppression Timer Clock
Period
Note 4
0.475 0.5
Accuracy
-3
tREJECT
Glitch Rejection
Maximum length pulse that will not cause
4.5
output to change state.(4)
VSAT
Saturation Detection Threshold
High level
95
Low level
5
Power-On Hour Meter
Timebase Accuracy
Resolution
0°C ≤ TA ≤ +70°C(4)
–40°C ≤ TA ≤ +105°C
Note 4
+5
+10
10
Non-Volatile (FLASH) Memory
tWR
Write Cycle Time(7)
From STOP of a one to four-byte write
transaction.(4)
Data Retention
100
Endurance Minimum Permitted Number Write
Cycles
10,000
Serial Data I/O Pin, DATA
VOL
VIL
VIH
ILEAK
CIN
Low Output Voltage
Low Input Voltage
High Input Voltage
Input Current
Input Capacitance
IOL = 3mA
IOL = 6mA
Note 4
2.1
10
Micrel
Max Units
10
µs
1
ms
300 ms
200 ms
95
µs
µs
95
µs
100
µs
400 ms
1
µs
1
µs
0.525 ms
+3 %F.S.
µs
%VDDA
%VDDA
–5
%
–10
%
hours
13
ms
years
cycles
0.4
V
0.6
V
0.8
V
V
±1
µA
pF
August 2004
11
M9999-082404