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| MDV3604 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single P-Channel Trench MOSFET, -30V, -20A, 12.1m(ohm) | |||
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10
* Note :V = -15V
DS
I = -12A
D
8
6
4
2
0
0
10
20
30
40
-Qg [nC]
Fig.7 Gate Charge Characteristics
2.5n
2.0n
Ciss
1.5n
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss
ds
gd
Crss = Cgd
1.0n
500.0p
C
oss
C
rss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
0.0
0
5
10
15
20
25
30
-V [V]
DS
Fig.8 Capacitance Characteristics
102
101
Operation in This Area
is Limited by R DS(on)
10 ms
100 ms
1s
10s
DC
100
Single Pulse
TJ=Max Rated
TC=25â
10-1
10-1
100
101
102
-V [V]
DS
Fig.9 Maximum Safe Operating Area
50
40
30
20
10
0
25
50
75
100
125
150
TC [â ]
Fig.10 Maximum Drain Current vs.
Ambient Temperature(TC)
20
15
10
5
0
25
50
75
100
125
150
T,
A
Case
Temperature
[â
]
Fig.11 Maximum Drain Current vs.
Ambient Temperature (TA)
Jan. 2015. Version 1.3
4
101
D=0.5
100 0.2
0.1
0.05
0.02
10-1
0.01
single pulse
10-2
* Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
10-4
10-3
10-2
10-1
100
101
102
103
t , Rectangular Pulse Duration [s]
1
Fig.12 Transient Thermal Response Curve
MagnaChip Semiconductor Ltd.
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