MDV3604 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single P-Channel Trench MOSFET, -30V, -20A, 12.1m(ohm)

MDV3604
Single P-Channel Trench MOSFET, -30V, -20A, 12.1mΩ
General Description
The MDV3604 uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance.
This device is suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
DD DD
DD DD
Features
 VDS = -30V
 ID = -20A @VGS = -10V

RDS(ON)
< 10.0mΩ @VGS = -20V
< 12.1mΩ @VGS = -10V
< 18.3mΩ @VGS = -5V
Applications
 Load Switch
 General purpose applications
 Smart Module for Note PC Battery
D
G
S SSG
GS SS
PDFN33
Absolute Maximum Ratings (T_a =25^oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ⁽¹⁾
Characteristics
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
Junction and Storage Temperature Range
TC=25^oC (Package limited)
TC=25^oC (Silicon limited)
TA=25^oC
TA=70^oC
TC=25^oC
TA=25^oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
S
Rating
-30
±25
-20
-36.1
-12.6⁽³⁾
-10.2⁽³⁾
-32
27.7
3.4⁽³⁾
84.5
-55~150
Unit
V
V
A
A
W
mJ
o_C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Jan. 2015. Version 1.3
(Note 1)
1
Symbol
RθJA
RθJC
Rating
36
4.5
Unit
o_C/W
MagnaChip Semiconductor Ltd.