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| MDV1545S Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V | |||
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10
â» Note : ID = 13A
VDS = 15V
8
6
4
2
0
0
5
10
15
20
25
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
103
102
1 ms
101
Operation in This Area
is Limited by R
DS(on)
100
10-1
10-1
Single Pulse
TJ=Max Rated
TC=25â
100
101
VDS, Drain-Source Voltage [V]
10 ms
100 ms
1s
10 s
DC
102
Fig.9 Maximum Safe Operating Area
101
D=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
single pulse
10-2
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
10-3
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
2000
1600
1200
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
400
0
0
â» Notes ;
Coss
1. VGS = 0 V
2. f = 1 MHz
Crss
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
50
40
Limited by Package
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature [â ]
Fig.10 Maximum Drain Current vs.
Case Temperature
Apr. 2015. Ver. 1.0
4
MagnaChip Semiconductor Ltd.
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