MDV1545S Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V

50
V_GS = 10V
4.5V
3.0V
3.5V
40
30
20
10
2.5V
0
0
1
2
3
4
5
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.8
※ Notes :
1. V_GS = 10 V
1.6
2. I_D = 13 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
30
※ Notes :
V_DS = 5V
25
20
15
10
5
0
0
1
2
3
4
5
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
10
8
V_GS = 4.5V
6
V_GS = 10V
4
2
0
5
10 15 20 25 30 35 40 45 50
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
30
※ Notes :
25
I_D = 13.0A
20
15
10
5
0
2
3
4
5
6
7
8
9
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
50
※ Notes :
V = 0V
GS
40
30
20
10
0.0
0.5
1.0
1.5
V , Source-Drain voltage [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Apr. 2015. Ver. 1.0
3
MagnaChip Semiconductor Ltd.