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MDV1545 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V
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10
* Note : I = 11A
D
V = 15V
DS
8
6
4
2
0
0
5
10
15
20
Q , Total Gate Charge [nC]
G
Fig.7 Gate Charge Characteristics
103
102
101
Operation in This Area
is Limited by R
DS(on)
DC
100
10-1
10-1
Single Pulse
T =Max Rated
J
T =25oC
C
100
101
V , Drain-Source Voltage [V]
DS
10 ms
100 ms
1s
10 s
102
Fig.9 Maximum Safe Operating Area
101
D=0.5
0.2
100 0.1
0.05
0.02
10-1
0.01
single pulse
10-2
10-3
10-4
10-3
* Notes :
Duty Factor, D=t /t
12
PEAK T = P * Z * R (t) + T
J DM thJC thJC
C
10-2
10-1
100
101
102
103
t , Rectangular Pulse Duration [sec]
1
Fig.11 Transient Thermal Response
Curve
1500
1000
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
C
iss
C
oss
* Notes ;
500
1. V = 0 V
GS
2. f = 1 MHz
C
rss
0
0
5
10
15
20
25
30
V , Drain-Source Voltage [V]
DS
Fig.8 Capacitance Characteristics
50
40
30
Limited by Package
20
10
0
25
50
75
100
125
150
T , Case Temperature [oC]
C
Fig.10 Maximum Drain Current vs.
Case Temperature
Oct. 2015. Ver. 1.3
4
MagnaChip Semiconductor Ltd.
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