MDV1545 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V

50
V = 10V
GS
8.0V
40
6.0V
4.5V
4.0V
30
20
10
3.0V
0
0.0
0.5
1.0
1.5
2.0
V , Drain-Source Voltage [V]
DS
Fig.1 On-Region Characteristics
1.8
* Notes :
1. V = 10 V
GS
2. I = 11 A
1.6
D
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T , Junction Temperature [oC]
J
Fig.3 On-Resistance Variation with
Temperature
20
* Notes :
V = 5V
DS
15
10
5
0
0
1
2
3
4
5
V , Gate-Source Voltage [V]
GS
Fig.5 Transfer Characteristics
20
18
16
14
V = 10V
GS
12
10
V = 4.5V
GS
8
6
4
2
0
0
20
40
I , Drain Current [A]
D
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
100
90
* Notes :
I = 11.0A
D
80
70
60
50
40
30
20
10
0
2
3
4
5
6
7
8
9
10
V , Gate to Source Volatge [V]
GS
Fig.4 On-Resistance Variation with
Gate to Source Voltage
* Notes :
V = 0V
GS
10
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V , Source-Drain voltage [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Oct. 2015. Ver. 1.3
3
MagnaChip Semiconductor Ltd.