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| MDU3603 Datasheet, PDF (4/7 Pages) MagnaChip Semiconductor. – Single P-Channel Trench MOSFET, -30V, -67A, 9.1m(ohm) | |||
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10
* Note :VDS = -15V
ID = -12A
8
6
4
2
0
0
10
20
30
40
50
-Qg [nC]
Fig.7 Gate Charge Characteristics
103
102
101
Operation in This Area
is Limited by R DS(on)
100
10 ms
100 ms
1s
10s
DC
10-1
Single Pulse
Rθ j=c 2â/W
Ta=25â
10-2
10-1
100
101
102
-VDS [V]
Fig.9 Maximum Safe Operating Area
3.0n
2.5n
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2.0n
Ciss
1.5n
1.0n
500.0p
Coss
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
0.0
0
5
10
15
20
25
30
-V [V]
DS
Fig.8 Capacitance Characteristics
100
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
Ta [â]
Fig.10 Maximum Drain Current vs.
Ambient Temperature
101
100
D=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
single pulse
* Notes :
Duty Factor, D=t /t
12
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RÎ JC=2â/W
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [s]
Fig.11 Transient Thermal Response Curve
May. 2011. Version 1.1
4
MagnaChip Semiconductor Ltd.
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