MDU3603 Datasheet, PDF (1/7 Pages) MagnaChip Semiconductor. – Single P-Channel Trench MOSFET, -30V, -67A, 9.1m(ohm)

MDU3603
Single P-Channel Trench MOSFET, -30V, -67A, 9.1mΩ
General Description
The MDU3603 uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance.
This device is suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
DD DD
DD DD
Features
VDS = -30V
ID = -67A @VGS = -10V
RDS(ON)
< 7.5mΩ @VGS = -20V
< 9.1mΩ @VGS = -10V
< 13.6mΩ @VGS = -5V
Applications
Load Switch
General purpose applications
Smart Module for Note PC Battery
D
G
S SSG
GS SS
PDFN56
Absolute Maximum Ratings (T_a =25^oC unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Silicon limited)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
(Note 1)
(Note 2)
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
S
Rating
-30
±25
-67
-120
2.5
112.5
-55~150
Rating
50
2
Unit
V
V
A
A
W
mJ
o_C
Unit
o_C/W
May. 2011. Version 1.1
1
MagnaChip Semiconductor Ltd.