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| MDU1518 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V, 94.5A, 4.2m(ohm) | |||
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10
â» Note : ID = 22A
VDS = 15V
8
6
4
2
0
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
103
Operation in This Area
is Limited by R DS(on)
102
101
10 ms
100 ms
1s
10 s
DC
100
Single Pulse
10-1
TJ=Max rated
TC=25â
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
101
D=0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
10-2
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK T = P * Z * R (t) + T
J DM θ JC θ JC
C
10-3
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
2400
2100
Ciss
1800
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1500
1200
900
600
Coss
300
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
0
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
120
110
100
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature [â]
Fig.10 Maximum Drain Current
Vs. Case Temperature
May. 2011. Version 1.1
4
MagnaChip Semiconductor Ltd.
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