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| MDU1518 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V, 94.5A, 4.2m(ohm) | |||
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MDU1518
Single N-channel Trench MOSFET 30V, 94.5A, 4.2mâ¦
General Description
The MDU1518 uses advanced MagnaChipâs MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU1518 is suitable device for DC/DC Converter
and general purpose applications.
Features
VDS = 30V
ID = 94.5A
@VGS = 10V
RDS(ON)
< 4.2 m⦠@VGS = 10V
< 6.2 m⦠@VGS = 4.5V
100% UIL Tested
100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PowerDFN56
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC
TC=70oC
TA=25oC
TA=70oC
TC=25oC
TC=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Steady State
Thermal Resistance, Junction-to-Case
Steady State
May. 2011. Version 1.1
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
94.5
75.6
27.3(3)
21.8(3)
100
65.7
42.1
5.5(3)
3.5(3)
143
-55~150
Unit
V
V
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
22.7
1.6
Unit
oC/W
MagnaChip Semiconductor Ltd.
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