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| MDS1655 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V, 11A, 17.5m(ohm) | |||
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10
â» Note : ID = 11A
8
6
4
2
0
0
5
10
15
20
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
1200
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
Ciss
600
400
Coss
200
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
0
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
103
Operation in This Area
is Limited by R DS(on)
102
100 µs
101
1 ms
100 ms
100
DC
10-1
Single Pulse
TJ=Max rated
TC=25â
10-2
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating
Area
15
10
5
0
25
50
75
100
125
150
Ta, Ambient Temperature [â]
Fig.10 Maximum Drain Current
vs. Ambient Temperature
10
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JA* Rθ JA(t) + TA
RÎ JA=50â/W
single pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
March. 2009. Version 1.0
4
MagnaChip Semiconductor Ltd.
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