MDS1655 Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V, 11A, 17.5m(ohm)

Ordering Information
Part Number
MDS1655URH
Temp. Range
-55~150^oC
Package
SOIC-8L
Packing
Tape & Reel
ROHS Status
Halogen Free
Electrical Characteristics (Ta =25^oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10.0V, ID = 11A
VGS = 4.5V, ID = 8A
VDS = 5V, ID = 11A
VDS = 12.5V, ID = 11A,
VGS = 10V
VDS = 12.5V, VGS = 0V,
f = 1MHz
VGS = 10V, VDS = 12.5V,
RL = 3Ω, RG = 3Ω
IS = 1A, VGS = 0V
IF = 11A, dl/dt = 100A/µs
Note :
1. Surface mounted FR-4 board with 2oz. Copper.
2. Starting TJ = 25°C, L = 1mH, IAS = 10A, VDD = 15V, VGS = 10V.
Min
Typ
Max Unit
30
-
-
V
1.0
1.9
3.0
-
-
1
µA
-
-
±0.1
-
14.5
17.5
mΩ
-
19.5
25.0
-
26
-
S
-
15.8
-
-
8.2
-
nC
-
3.05
-
-
4.05
-
-
626
-
-
72
-
pF
-
121
-
-
5.4
-
-
23
-
ns
-
18.6
-
-
9.6
-
-
0.73
1.0
V
-
25.4
-
ns
-
8.1
-
nC
March. 2009. Version 1.0
2
MagnaChip Semiconductor Ltd.