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| MDP1933 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 80V, 105A, 7.0m(ohm) | |||
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10
â» Note : ID = 50A
VDS = 40V
8
6
4
2
0
0
10
20
30
40
50
60
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
103
102
100 us
Operation in This Area
101
is Limited by R DS(on)
100
10-1
10-1
Single Pulse
TJ=Max rated
T =25â
C
100
101
VDS, Drain-Source Voltage [V]
1 ms
10 ms
100 ms
DC
102
Fig.9 Maximum Safe Operating Area
5000
4000
3000
2000
Ciss
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
0
0
5
10
15
20
25
30
35
40
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
120
100
80
60
40
20
0
25
50
75
100
125
150
TC, Case Temperature [â]
Fig.10 Maximum Drain Current vs.
Case Temperature
100
D=0.5
0.2
10-1 0.1
0.05
0.02
10-2
0.01
10-3
single pulse
10-4
10-5
10-5
10-4
â» Notes :
Duty Factor, D=t1/t2
PEAK
T
J
=
P
DM
*
Zθ
JC*
Rθ
JC(t)
+
T
C
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
Sep. 2015. Version 1.1
4
MagnaChip Semiconductor Ltd.
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