MDP1933 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 80V, 105A, 7.0m(ohm)

100
10 V
90
8.0 V
80
6.0 V
70
5.0 V
60
50
40
4.5 V
30
20
10
4.0 V
0
0
1
2
3
4
5
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
2.5
※ Notes :
1. V_GS = 10 V
2. I_D = 50 A
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
8
7
6
V_GS = 10V
5
4
3
0
10 20 30 40 50 60 70 80 90 100
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
20
18
※ Notes :
I_D = 50A
16
14
12
10
8
T_A = 25℃
6
4
2
0
4
5
6
7
8
9
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
100
※ Notes :
90
V_DS = 10V
80
70
60
50
T_A=25℃
40
30
20
10
0
0
1
2
3
4
5
6
7
8
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
※ Notes :
100
V = 0V
GS
10
T_A=25℃
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Sep. 2015. Version 1.1
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