MDP15N075 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 150V, 120A, 7.5m(ohm)

10
، طNote : I = 50A
D
V = 50V
DS
8
6
4
2
0
0
20
40
60
80
100
Q , Total Gate Charge [nC]
G
Fig.7 Gate Charge Characteristics
10³
1 us
10²
10 us
Operation in This Area
10¹
is Limited by R
DS(on)
100 us
1 ms
10 ms
10⁰
DC
Single Pulse
T =Max rated
J
T =25،ة
C
10^-1
10^-1
10⁰
10¹
10²
10³
V , Drain-Source Voltage [V]
DS
Fig.9 Maximum Safe Operating Area
10⁰
D=0.5
10^{-1 0.2}
0.1
0.05
0.02
0.01
10^-2
single pulse
، طNotes :
Duty Factor, D=t /t
12
PEAK T = P * Z * R (t) + T
J DM ¥èJC ¥èJC
C
10^-3
10^-5
10^-4
10^-3
10^-2
10^-1
10⁰
t , Rectangular Pulse Duration [sec]
1
Fig.11 Transient Thermal Response
Curve
Package Dimension
10000
8000
6000
4000
2000
C
rss
0
0
C
iss
C
oss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
، طNotes ;
1. V = 0 V
GS
2. f = 1 MHz
10
20
30
40
V , Drain-Source Voltage [V]
DS
Fig.8 Capacitance Characteristics
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
T , Case Temperature [،]ة
C
Fig.10 Maximum Drain Current vs.
Case Temperature