MDP15N075 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 150V, 120A, 7.5m(ohm)

MDP15N075
Single N-channel Trench MOSFET 150V, 120A, 7.5mΩ
General Description
Features
The MDP15N075 uses advanced MagnaChip’s MV MOSFET
Technology, which provides high performance in on-state resistance,
fast switching performance, and excellent quality.
These devices can also be utilized in industrial applications
such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter,
and general purpose applications.
 VDS = 150V
 ID = 120A @VGS = 10V
 Very low on-resistance RDS(ON)
< 7.5 mΩ @VGS = 10V
 100% UIL Tested
 100% Rg Tested
D
TO-220
Absolute Maximum Ratings (Ta = 25^oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current ⁽³⁾
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
TC=25^oC (Silicon Limited)
TC=25^oC (Package Limited)
TC=100^oC
TC=25^oC
TC=100^oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
Unit
150
V
±20
V
144
120
A
91
480
312
W
125
450
mJ
-55~150
o_C
Symbol
RθJA
RθJC
Rating
62.5
0.4
Unit
o_C/W