MDU1931 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 80V, 100A, 3.6m(ohm)

100
90
80
5.0V
70
6.0V
60
V_GS = 10V
50
40
4.0V
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.8
※ Notes :
1. V_GS = 10 V
1.6
2. I_D = 50.0 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
4.0
3.5
V_GS = 10V
3.0
2.5
2.0
0
10 20 30 40 50 60 70 80 90 100
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
10
9
※ Notes :
I_D = 50.0A
8
7
6
5
4
T_A = 25℃
3
2
1
0
4
5
6
7
8
9
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
90
※ Notes :
80
V_DS = 10V
70
60
50
T_A=25℃
40
30
20
10
0
0
1
2
3
4
5
6
7
8
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
100
※ Notes :
V = 0V
GS
10
1
T_A=25℃
0.0
0.3
0.6
0.9
1.2
1.5
V , Source-Drain voltage [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Aug 2014. Rev. 1.1
3
MagnaChip Semiconductor Ltd.