MDU1931 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 80V, 100A, 3.6m(ohm)

MDU1931
Single N-channel Trench MOSFET 80V, 100A, 3.6mΩ
General Description
The MDU1931 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU1931 is suitable device for Synchronous
Rectification For Server and general purpose applications.
Features
 VDS = 80V
 ID = 100A @VGS = 10V

RDS(ON)
< 3.6mΩ @VGS = 10V
 100% UIL Tested
 100% Rg Tested
D
DD DD
DD DD
S SSG
GS SS
PDFN56
Absolute Maximum Ratings (Ta = 25^oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
TC=25^oC (Silicon Limited)
TC=25^oC (Package Limited)
TC=100^oC
TA=25^oC⁽³⁾
TC=25^oC
TC=100^oC
TA=25^oC⁽³⁾
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
Aug 2014. Rev. 1.1
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
80
±20
127.2
100.0
80.5
20.5⁽³⁾
400.0
96.2
38.5
2.5⁽³⁾
242
-55~150
Unit
V
V
A
W
mJ
o_C
Symbol
RθJA
RθJC
Rating
50
1.3
Unit
o_C/W
MagnaChip Semiconductor Ltd.