MDP1923 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 100V, 69A, 13.9m(ohm)

100
10 V
90 ^{8.0 V}
7.0 V
80
70
6.0 V
5.0 V
60
4.5 V
50
40
30
20
4.0 V
10
0
0
1
2
3
4
5
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
2.5
※ Notes :
1. V_GS = 10 V
2. I_D = 15 A
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
90
※ Notes :
80
V_DS = 10V
70
60
50
T_A=25℃
40
30
20
10
0
0
1
2
3
4
5
6
7
8
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
16
14
12
V_GS = 10V
10
8
6
0
20
40
60
80
100
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
30
※ Notes :
I_D = 15A
25
20
15
T_A = 25℃
10
5
0
2
3
4
5
6
7
8
9
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
80
70
60
50
40
30
20
10
0
0.0
※ Notes :
V_GS = 0V
T_C = 25℃
0.3
0.6
0.9
1.2
1.5
V_SD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Jun. 2015. Rev 1.1
3
MagnaChip Semiconductor Ltd.