MDP1923 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 100V, 69A, 13.9m(ohm)

MDP1923
Single N-channel Trench MOSFET 100V, 69A, 13.9mΩ
General Description
The MDP1923 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDP1923 is suitable device for Synchronous
Rectification for Server / Adapter and general purpose
applications.
Features
 VDS = 100V
 ID = 69A @VGS = 10V

RDS(ON)
< 13.9 mΩ @VGS = 10V
 100% UIL Tested
 100% Rg Tested
D
TO-220
Absolute Maximum Ratings (Ta = 25^oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy
TC=25^oC
TC=100^oC
TC=25^oC
TC=100^oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
Jun. 2015. Rev 1.1
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS(2)
TJ, Tstg
Symbol
RθJA
RθJC
Rating
Unit
100
V
±20
V
69
44
A
276
139
W
56
72
mJ
-55~150
o_C
Rating
62.5
0.9
Unit
o_C/W
MagnaChip Semiconductor Ltd.