MDQ16N50G Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 16.5A, 0.35(ohm)

Ordering Information
Part Number
MDQ16N50GTP
MDQ16N50GTH
Temp. Range
-55~150^oC
-55~150^oC
Package
TO-247
TO-247
Packing
Tube
Tube
RoHS Status
Pb Free
Halogen Free
Electrical Characteristics (Ta =25^oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Maximum Continuos Drain to Source
Diode Forward Current
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
IS
VSD
trr
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 8.3A
VDS = 30V, ID = 8.3A
VDS = 400V, ID = 16A, VGS = 10V⁽³⁾
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 250V, ID = 16A,
RG = 25Ω⁽³⁾
-
IS = 16.5A, VGS = 0V
IF = 16A, dl/dt = 100A/μs⁽³⁾
Notes :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤16.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C
4. L=5.16mH, IAS=16.5A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Min
Typ
Max Unit
500
-
-
V
3.0
-
5.0
V
-
-
1
μA
-
-
100
nA
0.30 0.35
Ω
-
14.8
-
S
-
34.9
-
-
12.4
-
nC
-
14.2
-
-
1724
-
-
8.3
-
pF
-
226
-
-
46
-
-
88.5
-
ns
-
96.5
-
-
41
-
-
-
16.5
A
-
-
1.4
V
-
325
-
ns
-
3.34
-
μC
Jun 2011 Version 1.2
2
MagnaChip Semiconductor Ltd.