MDQ16N50G Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 16.5A, 0.35(ohm)

MDQ16N50G
N-Channel MOSFET 500V, 16.5A, 0.35Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
 VDS = 500V
 ID = 16.5A @VGS = 10V
 RDS(ON) ≤ 0.35Ω @VGS = 10V
Applications
 Power Supply
 HID
 Lighting
D
TO-247
S
G
D
G
G
Absolute Maximum Ratings (Ta = 25^oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current⁽¹⁾
Power Dissipation
Repetitive Avalanche Energy⁽¹⁾
Peak Diode Recovery dv/dt⁽³⁾
Single Pulse Avalanche Energy⁽⁴⁾
Junction and Storage Temperature Range
* ID limited by maximum junction temperature
TC=25^oC
TC=100^oC
TC=25^oC
Derate above 25 ^oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient⁽¹⁾
Thermal Resistance, Junction-to-Case⁽¹⁾
Jun 2011 Version 1.2
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Rating
500
±30
16.5
10.4
66
215
1.64
21.5
4.5
780
-55~150
Unit
V
V
A
A
A
W
W/ ^oC
mJ
V/ns
mJ
o_C
Symbol
RθJA
RθJC
Rating
40
0.58
Unit
o_C/W
MagnaChip Semiconductor Ltd.