MDP8N60 Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 8A, 1.0(ohm)

Ordering Information
Part Number
MDP8N60TH
Temp. Range
-55~150^oC
Package
TO-220
Packing
Tube
RoHS Status
Halogen Free
Electrical Characteristics (Ta =25^oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
IS
Source-Drain Diode Forward
Voltage
VSD
Body Diode Reverse Recovery
Time
trr
Body Diode Reverse Recovery
Charge
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 4.0A
VDS = 30V, ID = 4.0A
VDS = 480V, ID = 8.0A, VGS = 10V⁽³⁾
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 300V, ID = 8.0A,
RG = 25Ω⁽³⁾
IS = 8.0A, VGS = 0V
IF = 8.0A, dl/dt = 100A/μs⁽³⁾
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤8.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=9.0mH, IAS=8.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Min
Typ
Max Unit
600
-
3.0
-
-
V
5.0
-
-
1
μA
-
-
100
nA
0.85
1.0
Ω
-
8.5
-
S
-
21
-
-
6.2
-
nC
-
8.6
-
-
895
-
5
pF
-
105
-
26
-
42
ns
-
43
-
27
-
8.0
-
A
-
1.4
V
-
350
ns
-
3.3
μC
Dec. 2014 Version 2.2
2
MagnaChip Semiconductor Ltd.