MDP8N60 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 8A, 1.0(ohm)

MDP8N60
N-Channel MOSFET 600V, 8A, 1.0Ω
General Description
The MDP8N60 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDP8N60 is suitable device for SMPS, high Speed switching
and general purpose applications.
Features
 VDS = 600V
 VDS = 660V
 ID =8.0A
 RDS(ON) ≤ 1.0Ω
Applications
@ Tjmax
@ VGS = 10V
@ VGS = 10V
 Power Supply
 PFC
 High Current, High Speed Switching
Absolute Maximum Ratings (Ta = 25^oC)
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Characteristics
Continuous Drain Current (※)
Pulsed Drain Current⁽¹⁾
Power Dissipation
Repetitive Avalanche Energy EAR(1)
Peak Diode Recovery dv/dt⁽³⁾
Single Pulse Avalanche Energy⁽⁴⁾
Junction and Storage Temperature Range
※ Id limited by maximum junction temperature
TC=25^oC
TC=100^oC
TC=25^oC
Derate above 25 ^oC
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
EAR
Dv/dt
EAS
TJ, Tstg
Rating
600
660
±30
8.0
4.9
32
144
1.15
14.4
4.5
320
-55~150
Unit
V
V
V
A
A
A
W
W/ ^oC
mJ
V/ns
mJ
o_C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient⁽¹⁾
Thermal Resistance, Junction-to-Case⁽¹⁾
Dec. 2014 Version 2.2
1
Symbol
RθJA
RθJC
Rating
62.5
0.87
Unit
o_C/W
MagnaChip Semiconductor Ltd.