MLX16303 Datasheet, PDF (9/20 Pages) Melexis Microelectronic Systems – Bi-directional Remote Sensor Unit Interface

MLX16303
Bi-directional Remote Sensor Unit Interface
Edges during voltage PWM ( programming mode)
Change from Voutx = low level to Voutx = high level tssio0vlh, tssio1vlh
( with C=120nF & load consuming >= 5mA! –
connected)
Change from Voutx = high level to Voutx = low level tssio0vlh, tssio1vlh
( with C=120nF & load –consuming >= 5mA! –
connected)
Capacity belonging to transmission
Current pulse transmission rate
10 µs
50 µs
120 nF
10
kHz
RETURN0, RETURN1
Voltage drop. (Ioutx ≤ 45mA for 6.0V<VS<7.7V,
Ioutx ≤ 35 mA for 4.9V < VS < 6.0V)
Short Circuit to GND diagnosis threshold:
Resistance from RETURNx to GND
only when required by user with channel off
Qualification time
Short Circuit to battery diagnosis threshold:
Resistance from RETURNx to battery
RETx: Voltage limit
Qualification time
RETURNx overtemperature protection:
Switch off Temperature of driver junction
Switch on Temperature of driver junction
SSIO0, SSIO1 (bidirectional CMOS)
Input low level voltage SSIO0, SSIO1
Input high level voltage SSIO0, SSIO1
Input leakage current SSIO0, SSIO1
Input Hysteresis SSIO0, SSIO1
Output low voltage SSIO0, SSIO1 Ido = 1mA
Output high voltage SSIO0,SSIO1Ido = -1mA
Ioutx range to get according SSIOx low level
Rrtrip = 56k
Ioutx range to get according SSIOx high level
Rrtrip = 56k
3901016303
Rev. 004
Vreturn0_sat
Vreturn1_sat
Rreturn0srtgnd,
Rreturn1srtgnd
treturn0srtgndq,
treturn1srtgndq
Rreturn0srtbat,
Rreturn1srtbat
Vret0>>,
Vret1>>
treturn0srtbatq,
treturn1srtbatq
treturn0tempoff,
treturn1tempoff
treturn0tempon,
treturn1tempon
VIL
VIH
IPL
IPH
VOL
VOH
ISSIO0high,
ISSIO1high
ISSIO0low,
ISSIO1low
Page 9 of 20
0
0.15 V
280 4.5K _Ω
500 2000 us
25
2.5K _Ω
0.2 0.4 V
500 2000 µs
140 160 °C
130 150 °C
-0.5 2.0 V
3.8 5.5 V
+/- 0.5 µA
0.4
V
0.45 V
4
V
18
45 mA
5
16 mA
Data Sheet
Jun/04